EC747N60 Datasheet, PDF (1/5 Pages) E-CMOS Corporation – 600V,7A N-Channel Power MOSFET

600V,7A N-Channel Power MOSFET
Features
◆ 650V, 7A, R_DS(ON)(Max.) = 1.1Ω @ VGS = 10V
◆ Low Crss
◆ Fast Switching
◆ 100 % Avalanche Tested
Applications
Adapter
LCD Panel Power
Switching Mode Power Supply
E-Bike Charger
EC747N60
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Absolute Maximum Ratings (Tc = 25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
PD
EAS
dv/dt
TJ, TSTG
Parameter
Drain-Source Voltage ^a
Gate-Source Voltage
Drain Current-Continuous, TC =25 ℃
Drain Current-Continuous, TC =100 ℃
Drain Current-Pulsed ^b
Maximum Power Dissipation @ TJ =25 ℃
Single Pulsed Avalanche Energy ^e
Peak Diode Recovery dv/dt ^c
Operating and Store Temperature Range
Limit
TO-220
TO-263
TO-220F
600
 30
7
4.2
28
125
40
196
4.6
-55 to 150
Thermal Characteristics
Unit
V
V
A
A
A
W
mJ
V/ns
℃
Symbol
R JC
R JA
Parameter
Thermal Resistance, Junction-Case Max.
Thermal Resistance, Junction-Ambient Max.
Value
1
3.1
63
Unit
℃/W
℃/W
E-CMOS Corp. (www.ecmos.com.tw)
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4J09N-Rev.F001