EC746N60J Datasheet, PDF (1/5 Pages) E-CMOS Corporation – 600V,5.5A N-Channel Power MOSFET

600V,5.5A N-Channel Power MOSFET
Features
◆ 600V, 5.5A, R_DS(ON)(Max.) = 2.0Ω @ VGS = 10V
◆ Low Crss
◆ Fast Switching
◆ 100 % Avalanche Tested
Applications
Charger
STB
Open Framed Power Supply
EC746N60J
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Absolute Maximum Ratings (Tc = 25°C unless otherwise noted)
Symbol
Parameter
Limit
Unit
TO-220 TO-220F
VDS
Drain-Source Voltage ^a
600
V
VGS
Gate-Source Voltage
 30
V
ID
Drain Current-Continuous, TC =25℃
Drain Current-Continuous, TC =100 ℃
IDM
Drain Current-Pulsed ^b
5.5
A
3.3
A
22
A
PD
Maximum Power Dissipation @ TJ =25 ℃
113
37
W
EAS
Single Pulsed Avalanche Energy ^e
114
mJ
TJ, TSTG Operating and Store Temperature Range
-55 to 150
℃
Thermal Characteristics
Symbol
R JC
R JA
Parameter
Thermal Resistance, Junction-Case Max.
Thermal Resistance, Junction-Ambient Max.
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 5
Value
1.1
3.4
63
Unit
℃/W
℃/W
4J06N-Rev.F001