EC745N60 Datasheet, PDF (1/5 Pages) E-CMOS Corporation – 600V,5A N-Channel Power MOSFET

600V,5A N-Channel Power MOSFET
Features
◆ 600V, 5A, R_DS(ON)(Max.) = 2.0Ω @ VGS = 10V
◆ Low Crss
◆ Fast Switching
◆ 100 % Avalanche Tested
Applications
Charger
STB
Open Framed Power Supply
EC745N60
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v
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Absolute Maximum Ratings (Tc = 25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
PD
EAS
dv/dt
TJ, TSTG
Parameter
Drain-Source Voltage ^a
Gate-Source Voltage
Drain Current-Continuous, TC =25℃
Drain Current-Continuous, TC =100 ℃
Drain Current-Pulsed ^b
Maximum Power Dissipation @ TJ =25 ℃
Single Pulsed Avalanche Energy ^e
Peak Diode Recovery dv/dt ^c
Operating and Store Temperature Range
Limit
TO-220 TO-220F
600
 30
5
3
20
104
35
114
4.5
-55 to 150
Unit
V
V
A
A
A
W
mJ
V/ns
℃
Thermal Characteristics
Symbol
R JC
R JA
Parameter
Thermal Resistance, Junction-Case Max.
Thermal Resistance, Junction-Ambient Max.
Value
1.2
3.6
63
Unit
℃/W
℃/W
E-CMOS Corp. (www.ecmos.com.tw)
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4J06N-Rev.F001