EC744N70 Datasheet, PDF (1/5 Pages) E-CMOS Corporation – 700V,4A N-Channel Power MOSFET

700V,4A N-Channel Power MOSFET
Features
◆ 700V, 4A, R_DS(ON)(Max.) = 2.7Ω @ VGS = 10V
◆ Low Crss
◆ Fast Switching
◆ 100 % Avalanche Tested
Applications
 Charger
 Standby Power.
EC744N70
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ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ, TSTG
Parameter
Drain-Source Voltage ^a
Gate-Source Voltage
Drain Current-Continuous, TC =25°C
Drain Current-Continuous, TC =100°C
Drain Current-Pulsed ^b
Maximum Power Dissipation @ TJ =25°C
Single Pulsed Avalanche Energy ^e
Operating and Store Temperature Range
Limit
Unit
TO-220F TO-251
700
V
± 30
V
4
A
2.53
A
16
A
35
54.3
W
242
mJ
-55 to 150
°C
Thermal Characteristics
E-CMOS Corp. (www.ecmos.com.tw)
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4J03N-Rev.F001