EC744N65 Datasheet, PDF (1/5 Pages) E-CMOS Corporation – 650V,5.5A N-Channel Power MOSFET

650V,5.5A N-Channel Power MOSFET
Features
◆ 650V, 5.5A, R_DS(ON)(Max.) = 2.5Ω @ VGS = 10V
◆ Low ON Resistance
◆ Low Gate Charge
◆ Peak Current vs. Pulse Width Curve
◆ RoHS Compliant/Lead Free Package
Applications
SMPS Power Supply
Adaptor /Charger
TV Main Power
LCD Panel Power
EC744N65
C
o
n
v
e
r
t
e
r
Absolute Maximum Ratings (Tc = 25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
PD
EAS
TL
TPKG
TJ, TSTG
Parameter
Drain-Source Voltage ^a
Gate-Source Voltage
Drain Current-Continuous, TC =25 ℃
Drain Current-Continuous, TC =100 ℃
Drain Current-Pulsed ^b
Maximum Power Dissipation @ TJ =25 ℃
Derating Factor
Single Pulsed Avalanche Energy ^e
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for
10 seconds Package Body for 10 seconds
Operating and Store Temperature Range
Limit
650
30
5.5
3.3
22
60
0.43
81
300
260
-55 to 150
Thermal Characteristics
Symbol
Rθ JC
Rθ JA
Parameter
Thermal Resistance, Junction-Case Max.
Thermal Resistance, Junction-Ambient Max.
Value
2.1
62
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 5
Unit
V
V
A
A
A
W
W/ ℃
mJ
℃
℃
Unit
℃/W
℃/W
4J06N-Rev.F001