EC743612 Datasheet, PDF (1/3 Pages) E-CMOS Corporation – 30V N-Channel MOSFETs

30V N-Channel MOSFETs
EC743612
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced
technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
fast switching applications.
SOT89 Pin Configuration
BVDSS
30V
RDSON
32mΩ
ID
6.5A
Features
■ 30V,6.5A,RDS(ON)=32MΩ@VGS=10V
20
■ Improved dt/dv capability
21
■ Fast switching
22
■ Green Device Avaliable
23
■ Suit for 1.8V Gate Driver applications
Application
■ Notebook
■ Load switch
■ Hand-held Instruments
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (TC=25℃)
Drain Current – Continuous (TC=100℃)
Drain Current – Pulsed ¹
Power Dissipation (TC=25℃)
Power Dissipation – Derate above 25℃
Storage Temperature Range
Operating Junction Temperature Range
Thermal Characteristics
Rating
30
± 12
6.5
4.1
26
1.47
0.012
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Symbol
RθJC
RθJA
Parameter
Thermal Resistance Junction to case
Thermal Resistance Junction to ambient
Typ.
---
---
Max.
30
85
Unit
℃/W
℃/W
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 3
6B02N-Rev.F001