EC742N65E Datasheet, PDF (1/4 Pages) E-CMOS Corporation – 650V 1.5A N-Channel Power MOSFET

650V 1.5A N-Channel Power MOSFET
EC742N65E
Features
650V, 1.5A, RDS(ON)(Max.) = 8.2Ω@VGS = 10V.
Low Intrinsic Capacitances.
100% Avalanche Rated.
Rugged and reliable.
Applications
Charger
Standby Power.
Absolute Maximum Ratings Tc = 25°C unless otherwise noted
Symbol
VDS
Parameter
Drain-Source Voltage ^a
Limit
Unit
SOT223 TO-251 TO-252
650
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous, TC =25°C
1.5
A
ID
Drain Current-Continuous, TC =100°C
IDM
Drain Current-Pulsed ^b
0.84
A
5.6
A
PD
Maximum Power Dissipation @ TJ =25°C
39
W
EAS
Single Pulsed Avalanche Energy
10.62
mJ
TJ, TSTG Operating and Store Temperature Range
-55 to 150
°C
Thermal Characteristics
Symbol
RθJC
Parameter
ThermalResistance,Junction-CaseMax.
Value
3.2
Unit
°C/W
Electrical Characteristics( T_J = 25°C unless otherwise noted)
▊ Off Characteristics
Symbol
BVDSS
IDSS
IGSSF
IGSSR
Parameter
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Forward Gate Body
LeakageCurrent
Reverse Gate Body
Leakage Current
Test Condition
Min. Typ. Max. Unit
VGS = 0V, ID = 250µA 650
-
-
V
VDS = 650V, VGS = 0V
-
-
20
µA
VDS = 0V, VGS = 30V
-
-
100 nA
VDS = 0V, VGS = -30V
-
-
-100 nA
E-CMOS Corp. (www.ecmos.com.tw)
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5A13N-Rev.F001