EC7408N60 Datasheet, PDF (1/5 Pages) E-CMOS Corporation – 600V, 8A N-Channel Power MOSFET

600V, 8A N-Channel Power MOSFET
EC7408N60
Features
◆ 600V, 8A, RDS(ON)(MAX) =1.2Ω @ VGS = 10V
◆ Low Crss
◆ Fast Switching
◆ 100 ％ Avalanche Tested
Applications
◆ Adapter
◆ LCD Panel Power
◆ Switching Mode Power Supply
◆ E-Bike Charger
Absolute Maximum Ratings (Tc = 25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ, TSTG
Parameter
Drain-Source Voltage ^a
Gate-Source Voltage
Drain Current-Continuous, TC =25
Drain Current-Continuous, TC =100
Drain Current-Pulsed ^b
Maximum Power Dissipation @ TJ =25
Single Pulsed Avalanche Energy ^e
Operating and Store Temperature Range
Limit
TO-220 TO-220F
TO-263
600
30
8
4.8
32
125
40
31
4.8
Unit
V
V
A
A
A
W
mJ
V/ns
Thermal Characteristics
Symbol
Rθ JC
Parameter
Thermal Resistance, Junction-Case
Max.
Value
1
3.1
Unit
/W
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 5
5B03N-Rev.F002