EC73L50N30H Datasheet, PDF (1/6 Pages) E-CMOS Corporation – N-Channel MOSFET

N-Channel MOSFET
EC73L50N30H
Main Product Characteristics
VDSS
300V
RDS(on) 45mΩ(typ.)
ID
60A ①
EC73L50N30H
YYWW
Features and Benefits:
▓ Advanced MOSFET process Technology
▓ Special designed for PWM, load switching and general purpose applications
▓Ultra low on-resistance with low gate charge
▓Fast switching and reverse body recovery
▓150℃ operating temperature
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high
repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device
for use in power switching application and a wide variety of other applications.
Absolute Max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameteer
Continuouus Drain Curreent, VGS @ 10VV ①
Continuouus Drain Curreent, VGS @ 10VV ①
Pulsed Drrain Current ②
Power Disssipation ③
Linear Deerating Factor
Drain-Souurce Voltage
Gate-to-Source Voltagee
Single Pulse Avalanchee Energy @ L==60mH
Avalanchee Current @ L=60mHL
Operatingg Junction andd Storage Temmperature Range
Max.
60
42.5
240
390
3.12
300
± 30
4465
12.2
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
E-CMOS Corp. (www.ecmos.com.tw)
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