EC739435 Datasheet, PDF (1/8 Pages) E-CMOS Corporation – -30V,-5.3A P-Channel MOSFET

-30V、-5.3A P-Channel MOSFET
EC739435
Description
The EC739435 uses advanced trench technology to provide excellent RDS(ON), low gate charge .It has been optimized for
power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V).
Features and Benefits:
◆ VDS = -30V,ID = -5.3A
RDS(ON) < 85mΩ @ VGS=-4.5V
RDS(ON) < 53mΩ @ VGS=-10V
◆ High Power and current handing capability
◆ Lead free product is acquired
◆ Surface Mount Package
Application
◆ Battery protection
◆ Load switch
◆ Power management
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Limit
-30
±20
-5.3
-20
2.5
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Resistance
Thermal Resistance, Junction-to-Ambient (Note 2)
RθJA
50
℃/W
E-CMOS Corp. (www.ecmos.com.tw)
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5D10N Rev.F003