EC738205 Datasheet, PDF (1/7 Pages) E-CMOS Corporation – 20V,4A Dual N-Channel MOSFET

20V、4A Dual N-Channel MOSFET
EC738205
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high
repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use
in buttery protection, power switching application and a wide variety of other applications.
Features and Benefits:
Advanced trench MOSFET process technology
Special designed for buttery protection , load switching and
general power management
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Main Product Characteristics:
VDSS
20V
RDS(on) 20mΩ (typ.)
ID
4A
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Parameter
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
Symbol
Limit
Unit
VDS
20
V
VGS
±10
V
ID
4
A
IDM
25
A
PD
1.25
W
TJ,TSTG -55 To 150
℃
RθJA
100
℃/W
E-CMOS Corp. (www.ecmos.com.tw)
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4L04N-Rev.F001