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EC7375N75 Datasheet, PDF (1/7 Pages) E-CMOS Corporation – 75V, 80A N-Channel MOSFET | |||
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75Vã80A N-Channel MOSFET
EC7375N75
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive
avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power
switching application and a wide variety of other applications.
Features and Benefits:
â Advanced MOSFET process technology
â Special designed for PWM, load switching and general purpose applications
â Ultra low on-resistance with low gate charge
â Fast switching and reverse body recovery
â 175â operating temperature
Main Product Characteristics
VDSS
75V
RDS(on) 6.5mΩ(typ.)
ID
80A
SSF7509
ABSOLUTE MAXIMUM RATINGS
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10Vâ
Continuous Drain Current, VGS @ 10Vâ
Pulsed Drain Currentâ¡
Power Dissipationâ¢
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
80
70
320
200
2.0
75
±20
375
50
-55 to + 175
Units
A
W
W/°C
V
V
mJ
A
°C
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 7
4J01N-Rev.F002
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