EC737509J7 Datasheet, PDF (1/5 Pages) E-CMOS Corporation – 80V,70A N-Channel MOSFET

80V、70A N-Channel MOSFET
EC737509J7
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Features and Benefits:
▓ Advanced MOSFET process technology
▓ Special designed for PWM, load switching and
general purpose applications
▓ Ultra low on-resistance with low gate charge
▓ Fast switching and reverse body recovery
▓ 150℃ operating temperature
Main Product Characteristics:
VDSS
80V
RDS(on) 7.5mΩ (typ.)
ID
70A
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Thermal Resistance
Symbol
Characterizes
RθJC
Junction-to-case
RθJA
Junction-to-ambient (t
10s) ④
Max.
70
60
280
98
2.0
75
± 20
375
50
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
Typ.
Max.
Units
—
1.31
/W
—
62
/W
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 5
5B11N-Rev.F002