EC737509A Datasheet, PDF (1/7 Pages) E-CMOS Corporation – N-Channel MOSFET

N-Channel MOSFET
EC737509A
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive
avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power
switching application and a wide variety of other applications.
Features and Benefits:
◆ Advanced MOSFET process technology
◆ Special designed for PWM, load switching and general purpose applications
◆ Ultra low on-resistance with low gate charge
◆ Fast switching and reverse body recovery
◆ 175℃ operating temperature
Main Product Characteristics
VDSS
75V
RDS(on) 6.5mΩ(typ.)
ID
80A
ABSOLUTE MAXIMUM RATINGS
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
80
70
320
187
2.0
75
±20
375
50
-55 to + 175
Units
A
W
W/°C
V
V
mJ
A
°C
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 7
5E06N-Rev.F001