EC736014J7 Datasheet, PDF (1/4 Pages) E-CMOS Corporation – 60V ,40A N-Channel

60V 、40A N-Channel
EC736014J7
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive
avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power
switching application and a wide variety of other applications.
Features and Benefits:
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175 operating temperature
Main Product Characteristics
VDSS
60V
RDS(on) 11mΩ (typ.)
ID
40A
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.3mH
Avalanche Current @ L=0.3mH
Operating Junction and Storage Temperature Range
Max.
40
60
80
115
0.74
60
± 20
235
39
-55 to + 175
Units
A
W
W/°C
V
V
mJ
A
°C
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 4
5A21N-Rev.F001