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EC736014 Datasheet, PDF (1/6 Pages) E-CMOS Corporation – 60V 60A N-Channel
60V 、60A N-Channel
EC736014
Description
The EC736014 is a new generation of middle voltage and high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability and electrical parameter repeatability. EC736014 is assembled
in high reliability and qualified assembly house.
Features and Benefits
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
Application
Power switching application
Absolute Maximum Ratings
ID@Tc=25ْ C
ID@Tc=100ْC
IDM
PD@TC=25ْC
PD@TC=25ْC
VGS
EAS
EAR
TJ
TSTG
Parameter
Continuous drain current,VGS@10V
Continuous drain current,VGS@10V
Pulsed drain current ①
Power dissipation
Linear derating factor
Gate-to-Source voltage
Single pulse avalanche energy ②
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
Max.
60
42
240
115
0.74
±20
235
TBD
–55 to +175
Units
A
W
W/ Cْ
V
mJ
ْC
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-case
Junction-to-ambient
Min.
—
—
Typ.
1.31
—
Max.
—
62
Units
℃/W
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 6
6B18N-Rev.F001