EC736007 Datasheet, PDF (1/5 Pages) E-CMOS Corporation – -50V, -130mA P-Channel MOSFET

-50V、-130mA P-Channel MOSFET
EC736007
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance. These features
combine to make this design an extremely efficient and reliable device for use in line current interrupter in telephone sets
and a wide variety of other applications
Features and Benefits:
Advanced MOSFET process technology
Special designed for Line current interrupter in
telephone sets, Relay, high speed and line
transformer drivers and general purpose
applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Main Product Characteristics
VDSS
-50V
6007
SOT-23
Marking and assigment _{Schematic diagram}
RDS(on) 2.1ohm(typ.)
ID
-130mA
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
ESD
TJ TSTG
Parameter
Continuous Drain Current, V GS @ -10V①
Continuous Drain Current, VGS @ -10V①
Pulsed Drain Current②
Power Dissipation ③
Drain-Source Voltage
Gate-to-Source Voltage
ESD Rating (HBM module)
Operating Junction and Storage Temperature
Range
Max.
-130
-100
-520
230
-50
± 20
1
-55 to + 150
Thermal Resistance
Units
mA
mW
V
V
KV
°C
Symbol
RθJA
Characterizes
Junction-to-ambient(t≤10s) ④
Junction-to-Ambient (PCBmounted, steady-state) ④
Typ.
—
—
Max.
556
540
Units
℃/W
℃/W
E-CMOS Corp. (www.ecmos.com.tw)
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5D16-Rev.F001