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EC734N60 Datasheet, PDF (1/6 Pages) E-CMOS Corporation – N-Channel Power MOSFET | |||
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N-Channel Power MOSFET
Features
â 600V, 4A, RDS(ON)(Max.) = 2.4Ω @ VGS = 10V
â Low Crss
â Fast Switching
â 100 % Avalanche Tested
Applications
ïµ Charger
ïµ Standby Power.
EC734N60
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ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted)
Symbol
Parameter
VDS
VGS
ID
IDM
PD
EAS
TJ, TSTG
Drain â Source Voltage a
Gate-Source Voltage
Drain Current-Continuous, TC =25 â
Drain Current-Continuous, TC =100 â
Drain Current-Pulsed b
Maximum Power Dissipation @ TJ =25 â
Single Pulsed Avalanche Energy e
Operating and Store Temperature Range
Limit
TO-220F
TO-251
TO-252
600
±30
4
2.5
16
33
77
217
-55 to 150
Thermal Characteristics
Symbol
Parameter
Rθ JC Thermal Resistance, Junction-Case Max.
Rθ JA Thermal Resistance, Junction-Ambient Max.
Value
3.58
1.61
120
110
Unit
V
V
A
A
A
W
mJ
â
Unit
â /W
â /W
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 6
4G22N-Rev.F001
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