EC734606 Datasheet, PDF (1/5 Pages) E-CMOS Corporation – Complementary MOSFET

Complementary MOSFET
EC734606
Description
The EC734606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The
complementary MOSFET may be used in power inverters, and other applications.
Features and Benefits:
◆ N-Channel
VDS = 30V,ID = 6.9A
RDS(ON) < 42mΩ @ VGS=4.5V
RDS(ON) < 28mΩ @ VGS=10V
◆ P-Channel
VDS = -30V,ID = -6A
RDS(ON) < 58mΩ @ VGS=-4.5V
RDS(ON) < 35mΩ @ VGS=-10V
◆ High Power and current handing capability
◆ Lead free product is acquired
◆ Surface Mount Package
SSF4606
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
N-Channel P-Channel Unit
Drain-Source Voltage
VDS
30
-30
V
Gate-Source Voltage
VGS
±20
±20
V
Drain Current-Continuous
ID(TA=25℃)
6.9
-6
A
ID(TA=70℃)
6.0
-5.0
A
Pulsed Drain Current (Note 1)
IDM
30
-30
A
Maximum Power Dissipation
PD(TA=25℃)
2.0
2.0
W
PD(TA=70℃)
1.44
1.44
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150 -55 To 150
℃
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
N-Ch
P-Ch
62.5
62.5
℃/W
E-CMOS Corp. (www.ecmos.com.tw)
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4L04N-Rev.F001