EC733626 Datasheet, PDF (1/4 Pages) E-CMOS Corporation – 30V,6.9A,N-Channel MOSFET

30V,6.9A,N-Channel MOSFET
EC733626
Description
The EC733626 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
Features and Benefits:
◆ VDS = 30V,ID =6.9A
RDS(ON) < 51mΩ @ VGS=4.5V
RDS(ON) < 35mΩ @ VGS=10V
◆ High Power and current handing capability
◆ Lead free product is acquired
◆ Surface Mount Package
SSF3626
Application
◆ PWM applications
◆ Load switch
◆ Power management
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID(25℃)
ID(70℃)
IDM
PD
TJ,TSTG
Limit
30
±20
6.9
5.5
30
2.8
-55 To 150
Unit
V
V
A
A
A
W
℃
Thermal Resistance
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 4
4J01N-Rev.F002