EC733617 Datasheet, PDF (1/4 Pages) E-CMOS Corporation – -30V, -10A P-Channel MOSFET

-30V、-10A P-Channel MOSFET
EC733617
Description
The EC733617 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
Features and Benefits:
◆ VDS = -30V,ID =-10A
RDS(ON) < 35mΩ @ VGS=-4.5V
RDS(ON) < 18mΩ @ VGS=-10V
◆ High Power and current handing capability
◆ Lead free product is acquired
◆ Surface Mount Package
Application
◆ PWM applications
◆ Load switch
◆ Power management
Pin Assignment
Absolute Maximum Ratings (TA=25 unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Parameter
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
Limit
Unit
VDS
-30
V
VGS
±25
V
ID(25℃)
-10
A
ID(70℃)
-8
A
IDM
-80
A
PD
3.1
W
TJ,TSTG
-55 To 150
℃
Thermal Resistance
Thermal Resistance, Junction-Ambient (Note 2)
RθJA
75
/W
E-CMOS Corp. (www.ecmos.com.tw)
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4L15N-Rev.F001