EC732N7002KB Datasheet, PDF (1/6 Pages) E-CMOS Corporation – 60V, 0.3A N-Channel MOSFET

60V、0.3A N-Channel MOSFET
EC732N7002KB
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive
avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power
switching application and a wide variety of other applications.
Features
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
ESD Rating：1000V HBM
150℃ operating temperature
Main Product Characteristics
VDSS
RDS(on)
ID
60V
2Ω(max.)
0.3A
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
0.3
1.2
0.63
60
±20
-55 to +150
Units
A
A
W
V
V
℃
Thermal Characteristics
Symbol
RθJA
Symbol
Junction-to-ambient（ t≦10 S）④
Typ.
Max.
200
Units
℃ /W
E-CMOS Corp. (www.ecmos.com.tw)
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4L11N-Rev.F001