EC732N60 Datasheet, PDF (1/6 Pages) E-CMOS Corporation – N-Channel Power MOSFET

N-Channel Power MOSFET
Features
◆ 600V, 2A, RDS(ON)(Max.) = 4.2 @VGS = 10V
◆ Low Crss
◆ Fast Switching
◆ 100 % Avalanche Tested
Applications
 Charger
 Standby Power.
EC732N60
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ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted)
Symbol
Parameter
VDS
VGS
ID
IDM
PD
E_AS
T_J, T_STG
Drain – Source Voltage ^a
Gate-Source Voltage
Drain Current-Continuous, T_C =25 ℃
Drain Current-Continuous, T_C =100 ℃
Drain Current-Pulsed ^b
Maximum Power Dissipation @ T_J =25 ℃
Single Pulsed Avalanche Energy ^C
Operating and Store Temperature Range
Thermal Characteristics
Symbol
Parameter
R_θ J_C Thermal Resistance, Junction-Case Max.
R_θ J_A Thermal Resistance, Junction-Ambient Max.
Limit
TO-220F
TO-251
TO-252
600
±30
2
1.2
8
23
34
115
-55 to 150
Value
5.56
3.7
120
110
Unit
V
V
A
A
A
W
mJ
℃
Unit
℃ /W
℃ /W
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 6
4G18N-Rev.F001