EC7320NS60F Datasheet, PDF (1/6 Pages) E-CMOS Corporation – 600V, 20A N-Channel MOSFET

600V、20A N-Channel MOSFET
EC7320NS60F
Description
The EC7320NS60F series MOSFETs is a new technology, which combines an innovative super junction technology and
advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power
density and space saving.
Features and Benefits:
◆ High dv/dt and avalanche capabilities
◆ 100% avalanche tested
◆ Low input capacitance and gate charge
◆ Low gate input resistance
Main Product Characteristics
VDSS
600V
RDS(on) 170mΩ(typ.)
ID
20A
SSF20NS60F
ABSOLUTE MAXIMUM RATINGS
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=13.8mH
Avalanche Current @ L=13.8mH
Operating Junction and Storage Temperature Range
Max.
20
13
80
34.7
0.27
600
±30
248
6
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 6
4J01N-Rev.F002