EC7320NS60 Datasheet, PDF (1/6 Pages) E-CMOS Corporation – 600V, 20A N-Channel MOSFET

600V、20A N-Channel MOSFET
EC7320NS60
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Features and Benefits:
Main Product Characteristics
VDSS
600V
RDS(on) 170Ω(typ.)
ID
20A
SSF7320NS60
ABSOLUTE MAXIMUM RATINGS
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=13.8mH
Avalanche Current @ L=13.8mH
Operating Junction and Storage Temperature Range
Max.
20
13
80
208
1.4
600
±30
248
6
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 6
4J02N-Rev.F002