EC7320N60 Datasheet, PDF (1/6 Pages) E-CMOS Corporation – N-Channel Power MOSFET

N-Channel Power MOSFET
Features
◆ 600V, 20A, RDS(ON)(Max.) = 0.35Ω @VGS = 10V
◆ Low Crss
◆ Fast Switching
◆ 100 % Avalanche Tested
Applications
 Adapter
 LCD panel Power
 Switching Mode Power Supply
 E-Bike Charger
ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted)
EC7320N60
C
o
n
v
e
r
t
e
r
Symbol
V_DS
V_GS
I_D
I_DM
P_D
E_AS
T_J, T_STG
Parameter
Drain - Source Voltage ^a
Gate-Source Voltage
Drain Current-Continuous, T_C =25 ℃
Drain Current-Continuous, T_C =100 ℃
Drain Current-Pulsed ^b
Maximum Power Dissipation @ T_J =25 ℃
Single Pulsed Avalanche Energy ^e
Operating and Store Temperature Range
Thermal Characteristics
Symbol
Parameter
R_θ J_C Thermal Resistance, Junction-Case Max.
R_θ J_A Thermal Resistance, Junction-Ambient Max.
Limit
600
±30
20
12.6
80
74
1433
-55 to 150
Value
1.69
120
Unit
V
V
A
A
A
W
mJ
℃
Unit
℃ /W
℃ /W
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 6
4G18N-Rev.F001