EC731N80D Datasheet, PDF (1/5 Pages) E-CMOS Corporation – 800V, 1A N-Channel MOSFET

800V、1A N-Channel MOSFET
EC731N80D
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high
repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use
in power switching application and a wide variety of other applications.
Features and Benefits:
◆ Advanced MOSFET process technology
◆ Special designed for PWM, load switching and
general purpose applications
◆ Ultra low on-resistance with low gate charge
◆ Fast switching and reverse body recovery
◆150 operating temperature
Main Product Characteristics
TO-252
pin Assignment
Schematic diagram
VDSS
800V
RDS(on) 13Ω(typ.)
ID
1A
Absolute max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=100mH
Avalanche Current @ L=100mH
Operating Junction and Storage Temperature Range
Max.
1
0.75
4
44
0.36
800
± 30
50
1
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 5
4J01N-Rev.F002