EC731N60E Datasheet, PDF (1/4 Pages) E-CMOS Corporation – 600V N-Channel Power MOSFET

600V N-Channel Power MOSFET
EC731N60E
Features
600V, 0.8A, RDS(ON)(Max.) = 11Ω@VGS = 10V.
Low Intrinsic Capacitance.
Rugged and reliable.
Applications
Charger
Standby Power.
ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
VDSS
VGS
ID
IDM
PD
EAS
TJ ,TSTG
a
Drain-Source Voltage
600
V
Gate-Source Voltage
±30
V
Continuous Drain Current, TC =25°C
0.8
A
Continuous Drain Current, TC =100°C
0.48
A
b
Drain Current-Pulsed
3.2
A
Power Dissipation @ TC=25°C
c
Single Pulsed Avalanche Energy
2.98
W
7.8
mJ
Operating and Store Temperature Rang
-55~150
°C
Thermal Characteristics
Symbol
Rθ JC
Parameter
Thermal Resistance, Junction-Case Max.
Value
42
Unit
°C/W
Electrical Characteristics( T_J = 25°C unless otherwise noted)
▊ Off Characteristics
Symbol
BVDSS
Characteristics
Drain-Source
Breakdown Voltage
IDSS
Drain-source
Leakage Current
IGSSF
Forward Gate-body
Leakage Current
IGSSR
Reverse Gate-body
Leakage Current
Test Condition
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VDS=0V,VGS=+30V
VDS=0V,VGS=-30V
Min. Typ. Max. Unit
600
-V
-
1 uA
-
- 100 nA
-
- 100 nA
E-CMOS Corp. (www.ecmos.com.tw)
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4G17N-Rev.F001