DCR1610F28 Datasheet, PDF (7/10 Pages) Dynex Semiconductor – Phase Control Thyristor

SEMICONDUCTOR
DCR1610F28
25
Conditions:
Tcase = 125°C
V_R =0
20
Pulse width = 10ms
15
10
1
10
100
Number of cycles
Fig.10 Multi-cycle surge current
9000
8000
7000
6000
Conditions :
T_j = 125^oC,
I_F= 1000A
t_p = 1000us
V_RM = -100V
Q_smax = 2060.337*(di/dt)^0.3349
5000
4000
3000
Q_smin = 1306.826*(di/dt)^0.3971
2000
1000
0
0
20
40
60
Rate of decay of on-state current, di/dt - (A/us)
Fig.12 Stored charge vs di/dt
60
6
Conditions:
T_case= 125°C
50
V_R = 0
half-sine wave
40
I_TSM
4
30
I²t
20
2
10
0
0
1
10
100
Pulse width, t_P - (ms)
Fig.11 Single-cycle surge current
700
Conditions:
T_j = 125^oC
600 _{IF = 1000A}
t_p = 1000us
500 ^{VRM = -100V}
I_RRmax = 41.043*(di/dt)^0.6867
400
300
200
I_RRmin = 32.398*(di/dt)^0.7099
100
0
0
10
20
30
40
50
60
Rate of decay of on-state current, di/dt - (A/us)
Fig.13 Reverse recovery current vs di/dt
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