GP800DDM18 Datasheet, PDF (6/10 Pages) Dynex Semiconductor – Hi-Reliability Dual Switch IGBT Module Advance Information

GP800DDM18
1600
1400
1200
T_j = 25˚C
1000
800
T_j = 125˚C
600
400
200
0
0
0.5
1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, V_F - (V)
Fig.7 Diode typical forward characteristics
2000
1800
1600
1400
1200
1000
800
600
400
T_case = 125˚C
V_ge = ±15V
200 ^{Rg(min) = 2.2Ω}
0
0
400
800
1200
1600
Collector-emitter voltage, V_ce - (V)
Fig.8 Reverse bias safe operating area
2000
10000
100
1000
I_C max. (single pulse)
10
100
t_{p = 1ms}
Diode
Transistor
1
10
Conditions:
T_vj = 125˚C, T_case = 50˚C
1
1
10
100
1000
Collector-emitter voltage, V_ce - (V)
Fig.9 Forward bias safe operating area
10000
0.1
1
10
100
1000
Pulse width, t_p - (ms)
Fig.10 Transient thermal impedance
10000
6/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com