GP801FSM18 Datasheet, PDF (5/10 Pages) Dynex Semiconductor – Hi-Reliability Single Switch Low VCE(SAT) IGBT Module

GP801FSM18
TYPICAL CHARACTERISTICS
1600
1400
Common emitter
T_case = 25˚C
V_ge = 20/15/12/10V
1200
1000
800
600
400
200
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V_ce - (V)
Fig.3 Typical output characteristics
1600
1400
Common emitter
T_case = 125˚C
V_ge = 20/15/12/10V
1200
1000
800
600
400
200
0
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, V_ce - (V)
Fig.4 Typical output characteristics
1000
900
800
T_case = 125˚C
V_GE = ±15V
V_CE = 800V
R_g = 2.2Ω Ohm
700
600
E_OFF
500
E_ON
400
300
200
E_REC
100
0
0 100 200 300 400 500 600 700 800
Collector current, I_C - (A)
Fig.5 Typical switching energy vs collector current
1400
1200
T_case = 125˚C
V_GE = ±15V
V_CE = 900V
I_C = 800A
1000
800
E_OFF
E_ON
600
400
200
E_REC
0
0 1 2 3 4 5 6 7 8 9 10
Gate resistance, R_G - (Ohms)
Fig.6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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