GP800DCS18 Datasheet, PDF (5/10 Pages) Dynex Semiconductor – Chopper Switch IGBT Module

GP800DCS18
TYPICAL CHARACTERISTICS
1600
1400
Common emitter
T_case = 25˚C
V_ge = 20/15/12V
1200
1000
V_ge = 10V
800
600
400
200
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, V_ce - (V)
Fig.3 Typical output characteristics
1600
1400
Common emitter
T_case = 125˚C
V_ge = 20/15/12V
1200
1000
V_ge = 10V
800
600
400
200
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Collector-emitter voltage, V_ce - (V)
Fig.4 Typical output characteristics
350
T_case = 125˚C
V_GE = ±15V
300 ^VCE ^{= 900V}
R_g = 2.2 OhmΩ
250
200
150
E_ON
E_OFF
E_REC
100
50
0
0 100 200 300 400 500 600 700 800
Collector current, I_C - (A)
Fig.5 Typical switching energy vs collector current
700
T_case = 125˚C
E_ON
V_GE = ±15V
600 ^VCE ^{= 900V}
I_C = 800A
500
400
E_OFF
300
200
E_REC
100
0
0 1 2 3 4 5 6 7 8 9 10
Gate resistance, R_G - (Ohms)
Fig.6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/10
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