GP1600FSS18 Datasheet, PDF (5/9 Pages) Dynex Semiconductor – Single Switch IGBT Module

GP1600FSS18
TYPICAL CHARACTERISTICS
3200
2800
Common emitter
T_case = 25˚C
V_ge = 20/15/12V
2400
2000
V_ge = 10V
1600
1200
800
400
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, V_ce - (V)
Fig. 3 Typical output characteristics
3200
2800
Common emitter
T_case = 125˚C
V_ge = 20/15/12V
2400
2000
V_ge = 10V
1600
1200
800
400
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Collector-emitter voltage, V_ce - (V)
Fig. 4 Typical output characteristics
700
T_case = 125˚C
V_GE = ±15V
600 ^VCE ^{= 900V}
R_g = 2.2Ω
500
400
300
200
E_OFF
E_ON
E_REC
100
0
0 200 400 600 800 1000 1200 1400 1600
Collector current, I_C - (A)
Fig. 5 Typical switching energy vs collector current
1800
T_case = 125˚C
1600 ^{VGE = ±15V}
E_ON
V_CE = 900V
I_T = 1600A
1400
1200
1000
800
E_OFF
600
400
E_REC
200
0
0 1 2 3 4 5 6 7 8 9 10
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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