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| DSF8035SK Datasheet, PDF (5/8 Pages) Dynex Semiconductor – Fast Recovery Diode | |||
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100000
10000
IF
⫠50µs
QS = 0
tp = 1ms
dIR/dt
QS
IRR
DSF8035SK
Conditions:
Tj = 150ËC,
VR = 100V
1000
IF = 200
IF = 100
IF = 2000
IF = 1000
IF = 500
100
1
10
100
Rate of rise of reverse current dIR/dt - (A/µs)
Fig. 4 Recovered charge
1000
1000
Conditions:
Tj = 150ËC,
VR = 100V
IF = 2000A
IF = 1000A
IF = 500A
IF = 200A
100
IF = 100A
10
1
10
100
1000
Rate of rise of reverse current dIR/dt - (A/µs)
Fig. 5 Typical reverse recovery current vs rate of rise of reverse current
5/8
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