DRD560G90 Datasheet, PDF (5/7 Pages) Dynex Semiconductor – Rectifier Diode

7000
6000
Q _{S max} = 3042.075*(di/dt)^0.2158
5000
4000
Q _{S min} = 2007.773*(di/dt) ^0.2158
3000
2000
1000
Conditions:
T _j = 160ºC
I _F = 1000A, t_p = 1000us , V _R = -100V
0
0
5
10
15
20
25
Rate of decay of forward current dIF/dt - (A/us)
Fig.4 Total stored charge
DRD560G90
-5-
300
250
I _RRmax = 43.406*(di/dt) ^0.5929
200
150
I _RRmin = 35.76*(di/dt) ^0.5929
100
Conditions:
T _j = 160ºC
I _F = 1000A, t _p = 1000us , V _R = -100V
50
0
0
5
10
15
20
25
Rate of decay of forward current dIF/dt - (A/us)
Fig.5 Maximum reverse recovery current
Fig.6 Maximum (limit) transient thermal impedance-
junction to case
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