DRD2690Y50 Datasheet, PDF (5/7 Pages) Dynex Semiconductor – Rectifier Diode

SEMICONDUCTOR
25000
20000
Q_{S max} = 4789.7*(di/dt)^0.3197
15000
10000
Conditions:
I_F = 2000A
V_R = 100V
T_j = 150^oC
5000
Q_{S min} = 2771.5*(di/dt)^0.3717
0
0
50
100
150
Rate of decay of forward current, di_F/dt - (A/us)
Fig.4 Total stored charge
DRD2690Y50
-5-
1400
1200
I_{RR max} = 81.792*(di/dt)^0.5963
1000
800
Conditions:
I_F = 2000A
600
V_R = 100V
T_j = 150^oC
400
200
I_{RR min} = 50.733*(di/dt)^0.6536
0
0
50
100
150
Rate of decay of forward current, d_IF/dt - (A/us)
Fig.5 Maximum reverse recovery current
Fig.6 Maximum (limit) transient thermal impedance-
junction to case
5/7
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