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| DG858DW45_15 Datasheet, PDF (5/7 Pages) Dynex Semiconductor – Gate Turn-Off Thyristor | |||
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DG858DW45
0.9VD
VD
0.9IT
dVD/dt
IT
VD VDM
0.1VD
td tr
dIFG/dt
tgt
IFG
0.1IFG
VFG
tw1
VDP
tgs
ITAIL
tgf
tgq
IG(ON)
0.1IGQ
QGQ
0.5IGQM
IGQM
V(RG)BR
VRG
Recommended gate conditions:
ITCM = 3000A
IFG = 40A
IG(ON) = 10A d.c.
tw1(min) = 20µs
IGQM = 1200A
diGQ/dt = 40A/µs
QGQ = 12500µC
VRG(min) = 2V
VRG(max) = 18V
These are recommended Dynex Semiconductor conditions. Other conditions are permitted
according to users gate drive specifications.
Figure 3. General switching waveforms
5/7
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