DSZ412SE Datasheet, PDF (4/9 Pages) Dynex Semiconductor – Avalanche Diode

DSZ412SE
CHARACTERISTICS
Symbol
Parameter
V_FM
Forward voltage
I_RM
Peak reverse current
V
Threshold voltage
TO
r_T
Slope resistance
*This selection for series sharing only upon request.
CURVES
Conditions
At 300A peak, T = 25^oC
case
At V , T = 150oC
RRM case
At 50 % V_RRM, T_case = 150^oC
At T_vj = 150˚C
At T_vj =150˚C
Min. Max. Units
-
2.1
V
-
20 mA
1* 10* mA
-
1.12
V
-
3.75 mΩ
Fig.2 Maximum (limit) forward characteristics
4/9
www.dynexsemi.com