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DRD960G34_15 Datasheet, PDF (4/6 Pages) Dynex Semiconductor – Rectifier Diode
DRD960G34
CURVES
9000
8000
7000
6000
Tj=175°C
5000
4000
3000
2000
1000
0
0.5
1.5
2.5
3.5
4.5
Instantaneous forward voltage,VF - (V)
Fig.2 Maximum forward characteristics
1600
1400
1200
1/2 wave
3 phase
6 phase
1000
800
600
400
200
0
0
200 400 600 800
Mean on-state current, IT(AV) - (A)
1000
Fig.3 Dissipation curves
13.0
12.0
11.0
Conditons:
Tcase=175°C
VR=0
Pulse width = 10ms
10.0
9.0
8.0
7.0
6.0
5.0
4.0
1
10
100
Number of cycles
Fig.4 Surge (Non-Repetitive) Forward current vs time
0.09
Double side cooled
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.001 0.01 0.1
1
Time ( s )
10 100
Fig.5 Maximum (limit) transient thermal impedance-
junction to case
4/6
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