DRD710G50 Datasheet, PDF (4/7 Pages) Dynex Semiconductor – Rectifier Diode

DRD710G50
CHARACTERISTICS
Symbol
Parameter
VFM
Forward voltage
IRM
Peak reverse current
QS
Total stored charge
Irr
Peak reverse recovery current
VTO
Threshold voltage
rT
Slope resistance
Test Conditions
At 1800A peak, Tcase = 25°C
At VRRM, Tcase = 150°C
IF = 1000A, dIRR/dt =3A/µs
Tcase = 150°C, VR =100V
At Tvj = 150°C
At Tvj = 150°C
CURVES
Min.
-
-
-
-
-
-
Max. Units
1.8
V
50
mA
2600
µC
80
A
0.88
V
0.687
m
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Dissipation curves
V_TM EQUATION
V_TM = A + Bln (I_T) + C.I_T+D.I_T
4/7
Where A = 1.183601
B = -0.13593
C = 0.000384
D = 0.030400
these values are valid for T_j = 150°C for I_F 100A to 2500A
www.dynexsemi.com