DRD2960Y40 Datasheet, PDF (4/7 Pages) Dynex Semiconductor – Rectifier Diode

SEMICONDUCTOR
CHARACTERISTICS
Symbol
Parameter
VFM
Forward voltage
IRM
Peak reverse current
QS
Total stored charge
Irr
Peak reverse recovery current
VTO
Threshold voltage
rT
Slope resistance
Test Conditions
At 3000A peak, Tcase = 25°C
At VDRM, Tcase = 150°C
IF = 2000A, dIRR/dt =3A/µs
Tcase = 150°C, VR =100V
At Tvj = 150°C
At Tvj = 150°C
DRD2960Y40
Min.
-
-
-
-
-
-
Max. Units
1.15
V
250
mA
5000
µC
150
A
0.75
V
0.118
m
CURVES
10000
8000
6000
4000
2000
dc
1/2 wave
3 phase sq.
6 phase sq.
0
0
2000
4000
6000
8000
Mean forward current I_F(AV)- (A)
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Dissipation curves
V_TM EQUATION
V_TM = A + Bln (I_T) + C.I_T+D.I_T
Where A = - 0.15357
B = 0.177571
C = 0.000179
D = - 0.01294
these values are valid for T_j = 150°C for I_F 500A to 5000A
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