DRD1100F48 Datasheet, PDF (4/7 Pages) Dynex Semiconductor – Rectifier Diode

DRD1100F48
CHARACTERISTICS
Symbol
Parameter
VFM
Forward voltage
IRM
Peak reverse current
QS
Total stored charge
Irr
Peak reverse recovery current
VTO
Threshold voltage
rT
Slope resistance
Test Conditions
At 3400A peak, Tcase = 25°C
At VRRM, Tcase = 150°C
IF = 2000A, dIRR/dt =3A/µs
Tcase = 150°C, VR =100V
At Tvj = 150°C
At Tvj = 150°C
CURVES
Min.
-
-
-
-
-
-
Max. Units
1.8
V
75
mA
4000
µC
115
A
0.84
V
0.383
m
Fig.2 Maximum & minimum on-state characteristics
Fig.3 Dissipation curves
V_TM EQUATION
V_TM = A + Bln (I_T) + C.I_T+D.I_T
4/7
Where A = 0.290476
B = 0.06449
C = 0.000335
D = 0.00408
these values are valid for T_j = 150°C for I_F 500A to 5000A
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