DFM900FXM18-A000 Datasheet, PDF (4/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module Preliminary Information

DFM900FXM18-A000
TYPICAL CHARACTERISTICS
2400
2100
1800
T_j = 25˚C
1500
1200
T_j = 125˚C
900
600
300
0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Foward voltage, V_F - (V)
Fig. 2 Diode typical forward characteristics
100
10
1
0.001
1
2
3
4
R_i (˚C/KW) 1.081 3.7409 4.7184 17.5092
τ_i (ms) 0.0066332 1.4384 12.8758 110.2138
0.01
0.1
1
10
Pulse width, t_p - (s)
Fig. 4 Transient thermal impedance
4000
3000
2000
1000
0
0
20 40 60 80 100 120 140 160
Case temperature, T_case - (˚C)
Fig. 5 Power dissipation
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
0
20 40 60 80 100 120 140 160
Case temperature, T_case - (˚C)
Fig. 6DC current rating vs case temperature
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