DFM800NXM33-A000 Datasheet, PDF (4/7 Pages) Dynex Semiconductor – Fast Recovery Diode Module Preliminary Information

DFM800NXM33-A000
TYPICAL CHARACTERISTICS
1600
100
T_j = 25˚C
1400
T_j = 125˚C
1200
10
1000
Diode
800
600
1
400
200
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Forward voltage, V_F - (V)
Fig. 2 Diode typical forward characteristics
0.1
0.001
Diode
R_i (˚C/KW)
τ_i (ms)
1
0.7386
0.0843
2
3
4
3.9115 5.5628 16.8308
3.7205 33.2138 236.5275
0.01
0.1
1
10
Pulse width, t_p - (s)
Fig. 4 Transient thermal impedance
4000
3600
3200
2800
2400
2000
1600
1200
800
400
0
1400
1200
1000
800
600
400
200
25
50
75
100
125
150
Case temperature, T_case - (°C)
Fig. 5 Power dissipation
0
0
25
50
75
100
125
150
Case temperature, T_case - (°C)
Fig. 6DC current rating vs case temperature
4/7
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