DCR4660H65_15 Datasheet, PDF (4/10 Pages) Dynex Semiconductor – Phase Control Thyristor

SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT
Gate trigger voltage
VGD
Gate non-trigger voltage
IGT
Gate trigger current
IGD
Gate non-trigger current
Test Conditions
VDRM = 5V, Tcase = 25°C
At 50% VDRM, Tcase = 125°C
VDRM = 5V, Tcase = 25°C
At 50% VDRM, Tcase = 125°C
DCR4660H65
Max. Units
1.5
V
0.4
V
350 mA
10
mA
CURVES
9000
8000
7000
6000
5000
4000
3000
2000
1000
min 25°C
max 25°C
min 125°C
max 125°C
0
0.50
1.00
1.50
2.00
2.50
Instantaneous on state voltage, V_T - (V)
Fig.2 Maximum & minimum on-state characteristics
V_TM EQUATION
V_TM = A + Bln (I_T) + C.I_T+D.I_T
Where A = 0.751026
B = 0.043281
C = 0.000160
D=0
these values are valid for T_j = 125°C for I_T 500A to 8000A
4/10
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