DCR2760M85 Datasheet, PDF (4/10 Pages) Dynex Semiconductor – Phase Control Thyristor

SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
VGT
Gate trigger voltage
VGD
Gate non-trigger voltage
IGT
Gate trigger current
IGD
Gate non-trigger current
Test Conditions
VDRM = 5V, Tcase = 25°C
At 50% VDRM, Tcase = 125°C
VDRM = 5V, Tcase = 25°C
At 50% VDRM, Tcase = 125°C
DCR2760M85
Max. Units
1.5
V
0.4
V
400 mA
10
mA
CURVES
7000
6000
5000
Max 125ºC
Min 125ºC
max 25ºC
min 25CºC
4000
3000
2000
1000
0
0.5
1.5
2.5
3.5
4.5
Instantaneous forward voltage drop, V_T - (V)
Fig.2 Maximum & minimum on-state characteristics
V_TM EQUATION
V_TM = A + Bln (I_T) + C.I_T+D.I_T
Where A = -0.224010
B = 0.1725829
C = 0.000292
D = 0.01039
these values are valid for T_j = 125°C for I_T 500A to 4200A
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