DCR1375SBA28 Datasheet, PDF (4/9 Pages) Dynex Semiconductor – Phase Control Thyristor

SEMICONDUCTOR
DCR1375SBA28
DYNAMIC CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min. Max. Units
IRRM/IDRM Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125° C
-
150
mA
dV/dt Max. linear rate of rise of off-state voltage To 67% VDRM, Tj = 125° C, gate open
-
1000 V/µs
dI/dt Rate of rise of on-state current
From 80% VDRM
Repetitive 50Hz
-
250 A/µs
Gate source 20V, 20Ω,
Non-repetitive
-
500 A/µs
tr < 1.0µs, Tj = 125° C
VT(TO) Threshold voltage – Low level
At Tvj = 125° C
-
1.02
V
rT
On-state slope resistance – Low level
At Tvj = 125° C
-
0.259 mΩ
tgd
Delay time
tq
Turn-off time
VD = 67% VDRM, gate source 30V, 15Ω
-
2
µs
tr = 0.5µs, Tj = 25° C
IT = 800A, tp = 1 ms, Tj = 125° C, VR = 50V,
dI/dt = 20A/µs, VDR = 67% VDRM
400
µs
dVDR/dt = 20V/µs linear
QS
Stored charge
IT = 800A, Tj = 125° C,dI/dt – 1A/µs,
-
1500 µC
IL
Latching current
Tj = 25° C, VD = 5V
-
500
mA
IH
Holding current
Tj = 25° C, RG-K = ∞
-
260
mA
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