TA449W Datasheet, PDF (3/12 Pages) Dynex Semiconductor – Asymmetric Thyristor

GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
V_GT
I
GT
V_GD
V_RGM
I
FGM
P_GM
P_G(AV)
Gate trigger voltage
Gate trigger current
Min. non trigger voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Average gate power
Conditions
V_DWM = 12V, R_L = 3Ω, T_case = 25^oC
V_DWM = 12V, R_L = 3Ω, T_case = 25^oC
-
-
-
-
Average time 10ms max
TA449..W
Min. Max. Units
-
5
V
-
400 mA
0.2
-
V
-
5
V
-
4
A
-
16
W
-
3
W
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