MP04HBT490-28 Datasheet, PDF (3/9 Pages) Dynex Semiconductor – Dual Thyristor, Thyristor/Diode Module

MP04---490
DYNAMIC CHARACTERISTICS - THYRISTOR
Symbol
Parameter
Test Conditions
Min. Max. Units
I_RRM/I_DRM Peak reverse and off-state current
At
V_RRM/V_DRM,
T
j
=
125˚C
-
50 mA
dV/dt Linear rate of rise of off-state voltage
To 67% V_DRM, T_j = 125˚C
-
1000 V/µs
dI/dt
Rate of rise of on-state current
From 67% V_DRM to 1500A, gate source 1.5A,
-
500 A/µs
t
r
=
0.5µs,
T
j
=
125˚C
V_T(TO)
Threshold voltage
At T_vj = 125˚C. See note 1
-
0.91 V
r
On-state slope resistance
T
At T_vj = 125˚C. See note 1
-
0.65 mΩ
Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
V
GT
I_GT
V_GD
V_FGM
V
FGN
V_RGM
I_FGM
P_GM
P
G(AV)
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V = 5V, T = 25^oC
DRM
case
V_DRM = 5V, T_case = 25^oC
At V T = 125oC
DRM case
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Max. Units
3.5
V
200 mA
0.25 V
30
V
0.25 V
5
V
10
A
150 W
10
W
3/9
www.dynexsemi.com