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| GP800DDS12 Datasheet, PDF (3/11 Pages) Dynex Semiconductor – Powerline N-Channel Dual Switch IGBT Module | |||
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ELECTRICAL CHARACTERISTICS
Tcase = 25ËC unless stated otherwise.
Symbol
Parameter
ICES Collector cut-off current
I
GES
V
GE(TH)
Gate leakage current
Gate threshold voltage
V
Collector-emitter saturation voltage
CE(SAT)
IF
Diode forward current
IFM Diode maximum forward current
VF
Diode forward voltage
Cies Input capacitance
LM
Module inductance
GP800DDS12
Conditions
Min. Typ. Max. Units
VGE = 0V, VCE = VCES
-
VGE = 0V, VCE = VCES, Tcase = 125ËC -
V
GE
=
±20V,
V
CE
=
0V
-
IC = 120mA, VGE = VCE
4
VGE = 15V, IC =800A
-
VGE = 15V, IC = 800A, Tcase = 125ËC -
DC
-
-
1 mA
-
50 mA
-
±4 µA
-
7.5 V
2.7 3.5 V
3.2 4.0 V
- 800 A
tp = 1ms
-
- 1600 A
IF = 800A
- 2.2 2.4 V
IF = 800A, Tcase = 125ËC
- 2.3 2.5 V
VCE = 25V, VGE = 0V, f = 1MHz
-
90
-
nF
-
-
20
-
nH
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/11
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